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MMBV3700LT1 Datasheet

High Voltage Silicon Pin Diodes

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MMBV3700LT1, MPN3700
High Voltage Silicon Pin
Diodes
These devices are designed primarily for VHF band switching
applications but are also suitable for use in general−purpose switching
circuits. They are supplied in a cost−effective plastic package for
economical, high−volume consumer and industrial requirements.
They are also available in surface mount.
Features
Long Reverse Recovery Time trr = 300 ns (Typ)
Rugged PIN Structure Coupled with Wirebond Construction for
Optimum Reliability
Low Series Resistance @ 100 MHz −
RS = 0.7 W (Typ) @ IF = 10 mAdc
Reverse Breakdown Voltage = 200 V (Min)
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Power Dissipation
@ TA = 25°C
MMBV3700LT1
Derate above 25°C
Symbol
VR
PD
Value
20
200
2.8
Unit
Vdc
mW
mW/°C
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
MPN3700
PD
280 mW
2.8 mW/°C
Junction Temperature
TJ
+125
°C
Storage Temperature Range
Tstg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
SOT−23
1
Anode
3
Cathode
MARKING
DIAGRAM
SOT−23 (TO−236AB)
3 CASE 318 −08
STYLE 8
4R M G
G
1
21
4R = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
TO−92
1
Anode
2
Cathode
MARKING
DIAGRAM
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 3
1
2
TO−92 (TO−226AC)
CASE 182−06
STYLE 1
MPN
3700
AYWW G
G
MPN = Device Code
3700 = Specific Device
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
1 Publication Order Number:
MMBV3700LT1/D


  ON Semiconductor Electronic Components Datasheet  

MMBV3700LT1 Datasheet

High Voltage Silicon Pin Diodes

No Preview Available !

MMBV3700LT1, MPN3700
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage (IR = 10 mAdc)
Diode Capacitance (VR = 20 Vdc, f = 1.0 MHz)
Series Resistance (Figure 5) (IF = 10 mAdc)
Reverse Leakage Current (VR = 150 Vdc)
Reverse Recovery Time (IF = IR = 10 mAdc)
Symbol
V(BR)R
CT
RS
IR
trr
Min Typ Max
200 −
− − 1.0
− 0.7 1.0
− − 0.1
− 300 −
Unit
Vdc
pF
W
mAdc
ns
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0
10
8.0
6.0
4.0
2.0
1.0
0.8
0.6
0.4
0.2
0.1
TYPICAL CHARACTERISTICS
800
TA = 25°C
700
600
500
400 TA = 25°C
300
200
100
2.0 4.0 6.0 8.0 10 12
IF, FORWARD CURRENT (mA)
Figure 1. Series Resistance
14
16
0
0.7 0.8 0.9
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
1.0
TA = 25°C
0 −10 −20 −30 −40 −50
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Diode Capacitance
100
40
10
4.0
1.0
0.4
0.1
0.04
0.01
0.004
0.001
−60
VR = 15 Vdc
−20 0 +20
+60 +100
TA, AMBIENT TEMPERATURE (°C)
Figure 4. Leakage Current
+140
ORDERING INFORMATION
Device
MMBV3700LT1
Package
SOT−23
Shipping
3000 / Tape & Reel
MMBV3700LT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
MPN3700
TO−92
1000 Units / Bulk
MPN3700G
TO−92
(Pb−Free)
1000 Units / Bulk
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2


Part Number MMBV3700LT1
Description High Voltage Silicon Pin Diodes
Maker ON
Total Page 4 Pages
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