2N5655 Description
2N5655, 2N5657 Plastic NPN Silicon High−Voltage Power Transistor These devices are designed for use in line−operated equipment such as audio output amplifiers; low−current, high−voltage converters;.
2N5655 Key Features
- Excellent DC Current Gain
- hFE = 30-250 @ IC = 100 mAdc Current-Gain
- Bandwidth Product
- fT = 10 MHz (Min) @ IC = 50 mAdc Pb-Free Packages are Available
- Base Current 6.0 0.5 1.0 1.0 Continuous Peak Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storag
- 65 to + 150
- For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering
- Rev. 9