2N5883 - Complementary Silicon High-Power Transistors

onsemi

Datasheet Details

Part number	2N5883
Manufacturer	onsemi
File Size	116.11 KB
Description	Complementary Silicon High-Power Transistors
Datasheet	2N5883 Datasheet

Overview

www.DataSheet4U.com 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High−Power Transistors Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications.

Key Features

http://onsemi. com.
Low Collector.
Emitter Saturation Voltage.
VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage Excellent DC Current Gain.
hFE = 20 (min) at IC = 10 Adc High Current Gain Bandwidth Product.
ft = 4.0 MHz (min) at IC = 1.0 Adc Pb.
Free Packages are Available.
25 AMPERE.

📁 Similar Datasheet

Part Number	Description	Manufacturer
2N5883	POWER TRANSISTORS	Mospec Semiconductor
2N5883	PNP SILICON POWER TRANSISTORS	Digitron Semiconductors
2N5883	SILICON EPITAXIAL PNP TRANSISTOR	TT
2N5883	Silicon PNP Power Transistors	Savantic
2N5883	COMPLEMENTARY SILICON POWER TRANSISTORS	Central Semiconductor

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