2N5883 transistors equivalent, complementary silicon high-power transistors.
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* Low Collector−Emitter Saturation Voltage −
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VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc Low Leakage Current ICEX = 1.0 mAdc (.
Features http://onsemi.com
* Low Collector−Emitter Saturation Voltage −
*
*
*
*
VCE(sat) = 1.0 Vdc.
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