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2SK3703 - N-Channel Power MOSFET

Features

  • ON-resistance RDS(on)1=20mΩ (typ. ).
  • 4V drive.
  • Input capacitance Ciss=1780pF (typ. ) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
  • 1 EAS Avalanche Current.
  • 2 IAV Note :.
  • 1 VDD=20V, L=200μH, IAV=30A (Fig.1).

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Datasheet Details

Part number 2SK3703
Manufacturer onsemi
File Size 187.45 KB
Description N-Channel Power MOSFET
Datasheet download datasheet 2SK3703 Datasheet

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Full PDF Text Transcription

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Ordering number : EN7681B 2SK3703 N-Channel Power MOSFET 60V, 30A, 26mΩ, TO-220F-3SG http://onsemi.com Features • ON-resistance RDS(on)1=20mΩ (typ.) • 4V drive • Input capacitance Ciss=1780pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=20V, L=200μH, IAV=30A (Fig.1) *2 L≤200μH, Single pulse Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 60 ±20 30 120 2.0 25 150 --55 to +150 135 30 Unit V V A A W W °C °C mJ A Stresses exceeding Maximum Ratings may damage the device.
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