900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




  ON Semiconductor Electronic Components Datasheet  

BUV21 Datasheet

NPN Silicon Power Transistor

No Preview Available !

BUV21
SWITCHMODEt Series
NPN Silicon Power
Transistor
This device is designed for high speed, high current, high power
applications.
Features
High DC Current Gain:
hFE min = 20 at IC = 12 A
Low VCE(sat), VCE(sat)
max = 0.6 V at IC = 8 A
Very Fast Switching Times:
TF max = 0.4 ms at IC = 25 A
These are PbFree Devices*
MAXIMUM RATINGS
Rating
CollectorEmitter Voltage
CollectorBase Voltage
EmitterBase Voltage
CollectorEmitter Voltage (VBE = 1.5 V)
CollectorEmitter Voltage (RBE = 100 W)
CollectorCurrent Continuous
Peak (PW v 10 ms)
BaseCurrent Continuous
Total Device Dissipation @ TC = 25_C
Operating and Storage Junction
Temperature Range
Symbol
VCEO(SUS)
VCBO
VEBO
VCEX
VCER
IC
ICM
IB
PD
TJ, Tstg
Value
200
250
7
250
240
40
50
8
250
65 to 200
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Adc
Apk
Adc
W
_C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max Unit
Thermal Resistance, JunctiontoCase
qJC
0.7 _C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
40 AMPERES
NPN SILICON POWER
METAL TRANSISTOR
200 VOLTS 250 WATTS
BASE
1
NPN
COLLECTOR
CASE
EMITTER 2
MARKING
DIAGRAM
1
2
TO204AE (TO3)
CASE 197A
STYLE 1
BUV21G
AYWW
MEX
BUV21 = Device Code
G = PbFree Package
A = Assembly Location
Y = Year
WW = Work Week
MEX = Country of Origin
ORDERING INFORMATION
Device
Package
Shipping
BUV21G
TO204
(PbFree)
100 Units / Tray
© Semiconductor Components Industries, LLC, 2013
December, 2013 Rev. 11
1
Publication Order Number:
BUV21/D


  ON Semiconductor Electronic Components Datasheet  

BUV21 Datasheet

NPN Silicon Power Transistor

No Preview Available !

BUV21
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS (Note 1)
CollectorEmitter Sustaining Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 200 mA, IB = 0, L = 25 mH)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current at Reverse Bias:
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 250 V, VBE = 1.5 V)(TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 250 V, VBE = 1.5 V, TC = 125_C)
Symbol
VCEO(sus)
ICEX
Min
200
Max Unit
Vdc
mAdc
3.0
12.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollectorEmitter Cutoff Current
(VCE = 160 V)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitterBase Reverse Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IE = 50 mA)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitterCutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VEB = 5 V)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSECOND BREAKDOWN
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSecond Breakdown Collector Current with base forward biased
(VCE = 20 V, t = 1 s)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 140 V, t = 1 s)
ICEO
VEBO
IEBO
3.0 mAdc
7V
1.0 mAdc
IS/b
12
0.15
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS (Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 12 A, VCE = 2 V)
(IC = 25 A, VCE = 4 V)
hFE
20 60
10
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollectorEmitter Saturation Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 12 A, IB = 1.2 A)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 25 A, IB = 3 A)
VCE(sat)
Vdc
0.6
1.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBaseEmitter Saturation Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 25 A, IB = 3 A)
VBE(sat)
1.5 Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 15 V, IC = 2 A, f = 4 MHz)
fT 8.0
MHz
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSWITCHING CHARACTERISTICS (Resistive Load)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTurn-on Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎStorage Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎFall Time
(IC = 25 A, IB1 = IB2 = 3 A,
VCC = 100 V, RC = 4 W)
ton 1.0 ms
ts 1.8
tf 0.4
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎProduct parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
1.0
0.8
0.6
0.4
0.2
0 40 80 120 160 200
TC, TEMPERATURE (°C)
Figure 1. Power Derating
http://onsemi.com
2


Part Number BUV21
Description NPN Silicon Power Transistor
Maker ON Semiconductor
PDF Download

BUV21 Datasheet PDF






Similar Datasheet

1 BUV20 NPN Transistor
Motorola Inc
2 BUV20 NPN Silicon Power Transistor
ON Semiconductor
3 BUV20 HIGH CURRENT NPN SILICON TRANSISTOR
STMicroelectronics
4 BUV20 NPN MULTI - EPITAXIAL POWER TRANSISTOR
Seme LAB
5 BUV20 Silicon NPN Power Transistor
Inchange Semiconductor
6 BUV21 40 AMPERES NPN SILICON POWER METAL TRANSISTOR
Motorola Inc
7 BUV21 NPN Silicon Power Transistor
ON Semiconductor
8 BUV21 SILICON POWER TRANSISTOR
SavantIC
9 BUV21 NPN Silicon Low Frequency High Power Switching Transistor
ETC





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy