
	ON Semiconductor Electronic Components Datasheet

BUV21 Datasheet

NPN Silicon Power Transistor

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BUV21

SWITCHMODEt Series

NPN Silicon Power

Transistor

This device is designed for high speed, high current, high power

applications.

Features

• High DC Current Gain:

hFE min = 20 at IC = 12 A

• Low VCE(sat), VCE(sat)

max = 0.6 V at IC = 8 A

• Very Fast Switching Times:

TF max = 0.4 ms at IC = 25 A

• These are Pb−Free Devices*

MAXIMUM RATINGS

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Collector−Emitter Voltage (VBE = −1.5 V)

Collector−Emitter Voltage (RBE = 100 W)

Collector−Current − Continuous

− Peak (PW v 10 ms)

Base−Current Continuous

Total Device Dissipation @ TC = 25_C

Operating and Storage Junction

Temperature Range

Symbol

VCEO(SUS)

VCBO

VEBO

VCEX

VCER

ICM

TJ, Tstg

Value

200

250

240

250

−65 to 200

Unit

Vdc

Adc

Apk

Adc

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max Unit

Thermal Resistance, Junction−to−Case

qJC

0.7 _C/W

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

40 AMPERES

NPN SILICON POWER

METAL TRANSISTOR

200 VOLTS − 250 WATTS

BASE

NPN

COLLECTOR

CASE

EMITTER 2

MARKING

DIAGRAM

TO−204AE (TO−3)

CASE 197A

STYLE 1

BUV21G

AYWW

MEX

BUV21 = Device Code

G = Pb−Free Package

A = Assembly Location

Y = Year

WW = Work Week

MEX = Country of Origin

ORDERING INFORMATION

Device

Package

Shipping

BUV21G

TO−204

(Pb−Free)

100 Units / Tray

December, 2013 − Rev. 11

Publication Order Number:

BUV21/D


	ON Semiconductor Electronic Components Datasheet

BUV21 Datasheet

NPN Silicon Power Transistor

No Preview Available !

BUV21

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS (Note 1)

Collector−Emitter Sustaining Voltage

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 200 mA, IB = 0, L = 25 mH)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current at Reverse Bias:

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 250 V, VBE = −1.5 V)(TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 250 V, VBE = −1.5 V, TC = 125_C)

Symbol

VCEO(sus)

ICEX

Min

200

Max Unit

Vdc

mAdc

3.0

12.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Cutoff Current

(VCE = 160 V)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter−Base Reverse Voltage

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IE = 50 mA)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter−Cutoff Current

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VEB = 5 V)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSECOND BREAKDOWN

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSecond Breakdown Collector Current with base forward biased

(VCE = 20 V, t = 1 s)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 140 V, t = 1 s)

ICEO

VEBO

IEBO

3.0 mAdc

1.0 mAdc

IS/b

0.15

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS (Note 1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 12 A, VCE = 2 V)

(IC = 25 A, VCE = 4 V)

hFE

20 60

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Saturation Voltage

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 12 A, IB = 1.2 A)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 25 A, IB = 3 A)

VCE(sat)

Vdc

0.6

1.5

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase−Emitter Saturation Voltage

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 25 A, IB = 3 A)

VBE(sat)

1.5 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDYNAMIC CHARACTERISTICS

Current Gain − Bandwidth Product

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 15 V, IC = 2 A, f = 4 MHz)

fT 8.0

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSWITCHING CHARACTERISTICS (Resistive Load)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTurn-on Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎStorage Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎFall Time

(IC = 25 A, IB1 = IB2 = 3 A,

VCC = 100 V, RC = 4 W)

ton 1.0 ms

ts 1.8

tf 0.4

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎProduct parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

1.0

0.8

0.6

0.4

0.2

0 40 80 120 160 200

TC, TEMPERATURE (°C)

Figure 1. Power Derating

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BUV21 Datasheet

NPN Silicon Power Transistor

BUV21 Datasheet

NPN Silicon Power Transistor

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