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  ON Semiconductor Electronic Components Datasheet  

BUV26 Datasheet

NPN Silicon Power Transistor

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BUV26
Switch‐mode Series NPN
Silicon Power Transistor
Designed for high−speed applications.
Features
Switch-mode Power Supplies
High Frequency Converters
Relay Drivers
Driver
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO(sus)
90
Vdc
Collector−Base Voltage
VCBO
180
Vdc
Emitter−Base Voltage
VEBO
7.0
Vdc
Collector Current − Continuous
IC
20
Adc
Collector Current − Peak (pw 10 ms)
ICM
30
Adc
Base Current − Continuous
IB
4.0
Adc
Base Current − Peak
IBM
6.0
Adc
Total Power Dissipation @ TC = 25°C
PD
Total Power Dissipation @ TC = 60°C
PD
85
W
65
W
Operating and Storage Junction
Temperature Range
TJ, Tstg 65 to +175 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Case
RqJC
1.76
°C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
1
November, 2014 − Rev. 6
www.onsemi.com
12 AMPERES
NPN SILICON
POWER TRANSISTORS
90 VOLTS, 85 WATTS
SCHEMATIC
COLLECTOR
2,4
1
BASE
3
EMITTER
MARKING
DIAGRAM
4
TO−220
CASE 221A
STYLE 1
BUV26G
AYWW
1
2
1
3
BUV26 = Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
BUV26G
TO−220
(Pb−Free)
50 Units / Rail
Publication Order Number:
BUV26/D


  ON Semiconductor Electronic Components Datasheet  

BUV26 Datasheet

NPN Silicon Power Transistor

No Preview Available !

BUV26
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 200 mA, IB = 0, L = 25 mH)
VCEO(sus)
90
Vdc
Collector Cutoff Current at Reverse Bias
(VCE = 180 V, VBE = −1.5 V, TC = 125°C)
ICEX
mAdc
1.0
Emitter Base Reverse Voltage
(IE = 50 mA)
VEBO
V
7.0
30
Emitter Cutoff Current
(VEB = 5.0 V)
IEBO
mAdc
1.0
Collector Cutoff Current
(VCE = 180 V, RBE = 50 W, TC = 125°C)
ICER
mAdc
3.0
ON CHARACTERISTICS
Collector−Emitter Saturation Voltage
(IC = 6.0 A, IB = 0.4 A)
(IC = 12 A, IB = 1.2 A)
VCE(sat)
Vdc
0.6
1.5
Base−Emitter Saturation Voltage
(IC = 12 A, IB = 1.2 A)
VBE(sat)
Vdc
2.0
SWITCHING CHARACTERISTICS (Resistive Load)
Turn On Time
IC = 12 A, IB = 1.2 A
ton
0.6
ms
Storage Time
VCC = 50 V, VBE = 6.0 V
ts
1.0
Fall Time
RB2 = 2.5 W
tf
0.15
SWITCHING CHARACTERISTICS (Inductive Load)
Storage Time
Fall Time
VCC = 50 V, IC = 12 A
IB(end) = 1.2 A, VB = 5.0 V
LB = 0.5 pH, TJ = 125°C
Ts
2.0
ms
Tf
.15
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse width 300 ms; Duty cycle 2%.
www.onsemi.com
2


Part Number BUV26
Description NPN Silicon Power Transistor
Maker ON Semiconductor
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BUV26 Datasheet PDF






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