FCPF190N60E Datasheet - ON Semiconductor

N-Channel MOSFET

FCPF190N60E Features

* 650 V @ TJ = 150°C

* Typ. RDS(on) = 160 mW

* Ultra Low Gate Charge (Typ. Qg = 63 nC)

* Low Effective Output Capacitance (Typ. Coss.eff = 178 pF)

* 100% Avalanche Tested

* These Devices are Pb

* Free and are RoHS Compliant Applications

FCPF190N60E General Description

SUPERFET II MOSFET is ON Semiconductor’s brand *new high voltage super *junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on *resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide .

FCPF190N60E Datasheet (190.09 KB)