FCPF190N65F Datasheet - ON Semiconductor

N-Channel MOSFET

FCPF190N65F Features

* 700 V @ TJ = 150°C

* RDS(on) = 168 mW (Typ.)

* Ultra Low Gate Charge (Typ. Qg = 60 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 304 pF)

* 100% Avalanche Tested

* These Devices are Pb

* Free and are RoHS Compliant Applications

FCPF190N65F General Description

SUPERFET II MOSFET is ON Semiconductor’s brand *new high voltage super *junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on *resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss,.

FCPF190N65F Datasheet (257.21 KB)