FDMA430NZ datasheet, mosfet equivalent, ON Semiconductor

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FDMA430NZ Features and benefits

* RDS(on) = 40 mW at VGS = 4.5 V, ID = 5.0 A
* RDS(on) = 50 mW at VGS = 2.5 V, ID = 4.5 A
* Low Profile − 0.8 mm Maximum in the New Package MicroFET 2x2 mm

FDMA430NZ Application

* Li−lon Battery Pack ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Symbol Parameter Ratings Unit.

FDMA430NZ Description

This Single N−Channel MOSFET has been designed using onsemi’s advanced POWERTRENCH process to optimize the RDS(on) @ VGS = 2.5 V on special MicroFETt leadframe. Features
* RDS(on) = 40 mW at VGS = 4.5 V, ID = 5.0 A
* RDS(on) = 50 mW at VGS = .

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