* Max RDS(on) = 366 mW at VGS = 10 V, ID = 1.0 A
* Typ Qg = 12.7 nC at VGS = 10 V
* Low Miller Charge
* Low Qrr Body Diode
* Optimized Efficiency at H.

Optimized for RDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC c.

UltraFET device combines characteristics that enable benchmark efficiency in power conversion applications. Optimized for RDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. Features

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