FDMC2674 - N-Channel MOSFET

onsemi

General Description

efficiency in power conversion applications.

Optimized for RDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.

Key Features

Max RDS(on) = 366 mW at VGS = 10 V, ID = 1.0 A.
Typ Qg = 12.7 nC at VGS = 10 V.
Low Miller Charge.
Low Qrr Body Diode.
Optimized Efficiency at High Frequencies.
UIS Capability (Single Pulse and Repetitive Pulse).
Pb.
Free, Halide Free and RoHS Compliant.

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FDMC2674 n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDMC2674
Manufacturer	onsemi
File Size	275.65 KB
Description	N-Channel MOSFET
Datasheet	FDMC2674 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, UltraFET Trench 220 V, 7.0 A, 366 mW FDMC2674 General Description UltraFET device combines characteristics that enable benchmark efficiency in power conversion applications. Optimized for RDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. Features • Max RDS(on) = 366 mW at VGS = 10 V, ID = 1.0 A • Typ Qg = 12.