FDMC2514SDC
Key Features
- Dual CoolTM Top Side Cooling PQFN package
- Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 22.5 A
- Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A
- High performance technology for extremely low rDS(on)
- SyncFET Schottky Body Diode
- RoHS Compliant This N-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.
