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FDMC7660 - N-Channel MOSFET

Datasheet Summary

Description

This N Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on

state resistance.

Features

  • Max rDS(on) = 2.2 mW at VGS = 10 V, ID = 20 A.
  • Max rDS(on) = 3.3 mW at VGS = 4.5 V, ID = 18 A.
  • High Performance Technology for Extremely Low rDS(on).
  • This Device is Pb.
  • Free, Halide Free and is RoHS Compliant.

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Datasheet preview – FDMC7660

Datasheet Details

Part number FDMC7660
Manufacturer ON Semiconductor
File Size 378.74 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMC7660 Datasheet
Additional preview pages of the FDMC7660 datasheet.

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Full PDF Text Transcription

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MOSFET – N-Channel, POWERTRENCH) 30 V, 20 A, 2.2 mW FDMC7660 General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features • Max rDS(on) = 2.2 mW at VGS = 10 V, ID = 20 A • Max rDS(on) = 3.3 mW at VGS = 4.
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