FDMC7660S - N-Channel MOSFET

onsemi

General Description

conversion applications.

Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.

Key Features

Max rDS(on) = 2.2 mW at VGS = 10 V, ID = 20 A.
Max rDS(on) = 2.95 mW at VGS = 4.5 V, ID = 18 A.
High Performance Technology for Extremely Low rDS(on).
This Device is Pb.
Free, Halide Free and is RoHS Compliant.

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FDMC7660S n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDMC7660S
Manufacturer	onsemi
File Size	398.34 KB
Description	N-Channel MOSFET
Datasheet	FDMC7660S Datasheet

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MOSFET – N-Channel, POWERTRENCH), SyncFETt 30 V, 20 A, 2.2 mW FDMC7660S General Description The FDMC7660S has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Features • Max rDS(on) = 2.2 mW at VGS = 10 V, ID = 20 A • Max rDS(on) = 2.95 mW at VGS = 4.