FDMD8540L Datasheet | onsemi

MOSFET - Dual, N-Channel, POWERTRENCH) Q1: 40 V, 156 A, 1.5 mW Q2: 40 V, 156 A, 1.5 mW General Description This device includes two 40 V N- Channel MOSFETs in a dual Power (5 mm x 6 mm) package. HS source and LS drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon. Features Q1: N- Channel - Max rDS(on) = 1.5 mW at VGS = 10 V, ID = 33 A - Max rDS(on) = 2.2 mW at VGS = 4.5 V, ID = 26 A Q2: N- Channel - Max rDS(on) = 1.5 mW at VGS = 10 V, ID = 33 A - Max rDS(on) = 2.2 mW at VGS = 4.5 V, ID = 26 A - Ideal for Flexible Layout in Primary Side of Bridge Topology - 100% UIL Tested - Kelvin High Side MOSFET Drive Pin- out Capability -...