FDMS0310AS
FDMS0310AS is N-Channel MOSFET manufactured by onsemi.
Description
The FDMS0310AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been bined to offer the lowest RDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
Features
- Max RDS(on) = 4.3 m W at VGS = 10 V, ID = 19 A
- Max RDS(on) = 5.2 m W at VGS = 4.5 V, ID = 17 A
- Advanced Package and Silicon bination for Low RDS(on) and High Efficiency
- Sync FET Schottky Body Diode
- MSL1 Robust Package Design
- 100% UIL Tested
- Pb- Free, Halide Free and Ro HS pliant
Applications
- Synchronous Rectifier for DC/DC Converters
- Notebook Vcore/GPU Low Side Switch
- Networking Point of Load Low Side Switch
- Tele Secondary Side Rectification
VDS 30 V
RDS(on) MAX 4.3 m W @ 10 V 5.2 m W @ 4.5 V
ID MAX 22 A
Pin 1
SSSG
DDDD
Top
Bottom
PQFN8 5 y 6, 1.27P (Power 56)
CASE 483AE
ELECTRICAL CONNECTION
D5 D6 D7 D8
4G 3S 2S 1S
N-CHANNEL MOSFET
MARKING DIAGRAM
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Value Unit
VDS Drain to Source Voltage
VGS Gate to Source Voltage (Note...
