FDMS3604S
FDMS3604S is N-Channel MOSFET manufactured by onsemi.
Description
This device includes two specialized N- Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous Sync FET™ (Q2) have been designed to provide optimal power efficiency.
Features
Q1: N- Channel
- Max r DS(on) = 8 m W at VGS = 10 V, ID = 13 A
- Max r DS(on) = 11 m W at VGS = 4.5 V, ID = 11 A
Q2: N- Channel
- Max r DS(on) = 2.6 m W at VGS = 10 V, ID = 23 A
- Max r DS(on) = 3.5 m W at VGS = 4.5 V, ID = 21 A
- Low Inductance Packaging Shortens Rise/Fall Times, Resulting in
Lower Switching Losses
- MOSFET Integration Enables Optimum Layout for Lower Circuit
Inductance and Reduced Switch Node Ringing
- This Device is Pb- Free and is Ro HS pliant
Applications
- puting
- munications
- General Purpose Point of Load
- Notebook VCORE
.onsemi.
G1 D1 D1 D1 D1 PHASE (S1/D2)
G2 S2 S2 S2
Top
Bottom
PQFN8 5x6, 1.27P CASE 483AJ
MARKING DIAGRAM
$Y&Z&3&K 22CA N7CC
$Y &Z &3 &K 22CA N7CC
= ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code
PIN CONFIGURATION
S2 5 S2 6 S2 7 G2 8
Q2 4 D1
PHASE
3 D1
2 D1
1 G1 Q1
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
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