FDN028N20 mosfet equivalent, n-channel mosfet.
* Max rDS(on) = 28 mW at VGS = 4.5 V, ID = 5.2 A
* Max rDS(on) = 45 mW at VGS = 2.5 V, ID = 4.4 A
* High Performance Trench Technology for Extremely Low rDS(o.
* Primary DC−DC Switch
* Load Switch
MOSFET MAXIMUM RATINGS (TC = 25°C, unless otherwise noted)
Symbol
Parame.
This N−Channel POWERTRENCH MOSFET is produced using
onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain low gate charge for superior switching performance.
Features
* Max rDS(on.
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