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FDN028N20 - N-Channel MOSFET

Datasheet Summary

Description

This N Channel POWERTRENCH MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on

state resistance and yet maintain low gate charge for superior switching performance.

Features

  • Max rDS(on) = 28 mW at VGS = 4.5 V, ID = 5.2 A.
  • Max rDS(on) = 45 mW at VGS = 2.5 V, ID = 4.4 A.
  • High Performance Trench Technology for Extremely Low rDS(on).
  • High Power and Current Handling Capability in a Widely Used Surface Mount Package.
  • Fast Switching Speed.
  • 100% UIL Tested.
  • This Device is Pb.
  • Free, Halide Free and is RoHS Compliant.

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Datasheet preview – FDN028N20

Datasheet Details

Part number FDN028N20
Manufacturer ON Semiconductor
File Size 337.79 KB
Description N-Channel MOSFET
Datasheet download datasheet FDN028N20 Datasheet
Additional preview pages of the FDN028N20 datasheet.

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Full PDF Text Transcription

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MOSFET – N-Channel, POWERTRENCH) 20 V, 6.1 A, 28 mW FDN028N20 General Description This N−Channel POWERTRENCH MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain low gate charge for superior switching performance. Features • Max rDS(on) = 28 mW at VGS = 4.5 V, ID = 5.2 A • Max rDS(on) = 45 mW at VGS = 2.5 V, ID = 4.
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