FDN5618P Datasheet, ON Semiconductor

* −1.25 A, −60 V  RDS(on) = 0.170 W @ VGS = −10 V  RDS(on) = 0.230 W @ VGS = −4.5 V
* Fast Switching Speed
* High Performance Trench Technology for Extremel.

Features
* −1.25 A, −60 V  RDS(on) = 0.170 W @ VGS = −10 V  RDS(on) = 0.230 W @ VGS = −4.5 V
* Fast Switching.

This 60 V P−Channel MOSFET uses onsemi’s high voltage POWERTRENCH process. It has been optimized for power management applications. Features
* −1.25 A, −60 V  RDS(on) = 0.170 W @ VGS = −10 V  RDS(on) = 0.230 W @ VGS = −4.5 V
* Fast Switchin.