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FDN5618P - P-Channel MOSFET

Description

This 60 V P

POWERTRENCH process.

It has been optimized for power management applications.

Features

  • 1.25 A,.
  • 60 V  RDS(on) = 0.170 W @ VGS =.
  • 10 V  RDS(on) = 0.230 W @ VGS =.
  • 4.5 V.
  • Fast Switching Speed.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • This Device is Pb.
  • Free and Halogen Free.

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Datasheet Details

Part number FDN5618P
Manufacturer onsemi
File Size 289.13 KB
Description P-Channel MOSFET
Datasheet download datasheet FDN5618P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFET – P-Channel, Logic Level, POWERTRENCH) 60 V FDN5618P General Description This 60 V P−Channel MOSFET uses onsemi’s high voltage POWERTRENCH process. It has been optimized for power management applications. Features  −1.25 A, −60 V  RDS(on) = 0.170 W @ VGS = −10 V  RDS(on) = 0.230 W @ VGS = −4.5 V  Fast Switching Speed  High Performance Trench Technology for Extremely Low RDS(on)  This Device is Pb−Free and Halogen Free Applications  DC−DC Converters  Load Switch  Power Management ABSOLUTE MAXIMUM RATINGS TA = 25C unless otherwise noted. Symbol Parameter Ratings Unit VDSS VGSS ID Drain−Source Voltage Gate−Source Voltage Drain Current – Continuous (Note 1a) Drain Current – Pulsed −60 V 20 V −1.
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