FDS6890A
Description
These N-Channel 2.5V specified MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Key Features
- 7.5 A, 20 V. RDS(ON) = 0.018 Ω @ VGS = 4.5 V RDS(ON) = 0.022 Ω @ VGS = 2.5 V.
- Low gate charge (23nC typical).
- Fast switching speed.
- High performance trench technology for extremely low RDS(ON).
- High power and current handling capability. D2 D2 5 D1 D1 6 G2 7 S2 G1 8 SO-8 pin 1 S1
