FDS8878
Description
This N- Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(on) and fast switching speed.
Features
- r DS(on) = 14 m W, VGS = 10 V, ID = 10.2 A
- r DS(on) = 17 m W, VGS = 4.5 V, ID = 9.3 A
- High Performance Trench Technology for Extremely Low r DS(on)
- Low Gate Charge
- High Power and Current Handling Capability
- These Devices are Pb- Free and are Ro HS pliant
Applications
- DC/DC Converters
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Ratings Unit
VDSS Drain to Source Voltage
VGSS Gate to Source Voltage
±20
Drain
Continuous (TA = 25°C,
Current VGS = 10 V, Rq JA = 50°C/W)
Continuous (TA = 25°C,
VGS = 4.5 V, Rq JA = 50°C/W)
Pulsed
EAS Single Pulse Avalanche Energy (Note 1)
Power Dissipation
Derate above 25°C
57 m J
20 m...
