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FDS8878 - N-Channel MOSFET

Datasheet Summary

Description

This N

improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(on) and fast switching speed.

Features

  • rDS(on) = 14 mW, VGS = 10 V, ID = 10.2 A.
  • rDS(on) = 17 mW, VGS = 4.5 V, ID = 9.3 A.
  • High Performance Trench Technology for Extremely Low rDS(on).
  • Low Gate Charge.
  • High Power and Current Handling Capability.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet preview – FDS8878

Datasheet Details

Part number FDS8878
Manufacturer ON Semiconductor
File Size 374.85 KB
Description N-Channel MOSFET
Datasheet download datasheet FDS8878 Datasheet
Additional preview pages of the FDS8878 datasheet.

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Full PDF Text Transcription

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MOSFET – N-Channel, POWERTRENCH) 30 V, 10.2 A, 14 mW FDS8878, FDS8878-F123 General Description This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Features • rDS(on) = 14 mW, VGS = 10 V, ID = 10.2 A • rDS(on) = 17 mW, VGS = 4.5 V, ID = 9.
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