FDS8958A-F085 Datasheet - ON Semiconductor

Dual N&P-Channel MOSFET

FDS8958A-F085 Features

* Q1: N-Channel 7.0A, 30V RDS(on) = 0.028Ω @ VGS = 10V RDS(on) = 0.040Ω @ VGS = 4.5V

* Q2: P-Channel 5A, -30V - RDS(on) = 0.052Ω @ VGS = -10V RDS(on) = 0.080Ω @ VGS = -4.5V

* Fast switching speed

* High power and handling capability in a widely used surface moun

FDS8958A-F085 General Description

These dual N- and P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for.

FDS8958A-F085 Datasheet (537.40 KB)