FQD4P40 mosfet equivalent, p-channel mosfet.
* -2.7 A, -400 V, RDS(on) = 3.1 Ω (Max.) @ VGS = -10 V,
Description
N These P-Channel enhancement mode power field effect IG transistors are produced using ON Semic.
N These P-Channel enhancement mode power field effect IG transistors are produced using ON Semiconductor’s
proprietary, planar stripe, DMOS technology. This
S advanced technology has been especially tailored to E minimize on-state resistance, provide.
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