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HGTG30N60B3D Datasheet N-Channel IGBT

Manufacturer: onsemi

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HGTG30N60B3D n-channel igbt by onsemi - Datasheet Preview

Datasheet Details

Part number	HGTG30N60B3D
Manufacturer	onsemi
File Size	424.40 KB
Description	N-Channel IGBT
Datasheet	HGTG30N60B3D Datasheet

Overview

UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 60 A, 600 V HGTG30N60B3D The HGTG30N60B3D is a MOS gated high voltage switching device combining the.

Key Features

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on.
state conduction loss of a bipolar transistor. The much lower on.
state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49170. The diode used in anti.
parallel with the IGBT is the development type TA49053. The IGBT is ideal for many high voltage switching.

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