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NDS7002A - N-Channel MOSFET

NDS7002A Product details

Description

These N channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. state resistance while providing rugged, reliable, and fast switching performance.

Features

  • High Density Cell Design for Low RDS(on).
  • Voltage Controlled Small Signal Switch.
  • Rugged and Reliable.
  • High Saturation Current Capability.
  • ESD Protection Level: HBM > 100 V, CDM > 2 kV.
  • This Device is Pb.
  • Free and Halogen Free DATA SHEET www. onsemi. com D G S 123 TO.
  • 92 CASE 135AN 1 2 3 1.
  • Source 2.
  • Gate 3.
  • Drain TO.
  • 92 CASE 135AR MARKING DIAGRAM $Y&Z&3 2N 7000 $Y = onsemi Logo &Z = Assembly Plant Code &3 = Date Code 2N7000 = Specific Device Code 3 1 2 SOT.
  • 23 CASE 318.
  • 08 1.
  • Gate 2.
  • Source 3.
  • Drain MARKING DIAGRAM 702MG G 702 = Specific Device Code M = Date Code G = Pb.
  • Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Se.

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N-Channel MOSFET ON Semiconductor
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