| Description | Silicon Carbide (SiC) MOSFET – EliteSiC, 28 mohm, 1700 V, M1, D2PAK-7L NTBG028N170M1 Features • Typ. RDS(on) = 28 mW • Ultra Low Gate Charge (typ. QG(tot) = 222 nC) • Low Effective Output Capacitance (typ. Coss = 200 pF) • 100% Avalanche Tested • RoHS Compliant Typical Applications • UPS • DC−DC Converter • Boost Converter MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Va... |
| Features |
• Typ. RDS(on) = 28 mW • Ultra Low Gate Charge (typ. QG(tot) = 222 nC) • Low Effective Output Capacitance (typ. Coss = 200 pF) • 100% Avalanche Tested • RoHS Compliant Typical Applications • UPS • DC−DC Converter • Boost Converter MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Sou... |
| Datasheet |
 NTBG028N170M1 Datasheet 294.44KB |
