NTBG028N170M1 Datasheet - ON Semiconductor

SiC MOSFET

* Typ. RDS(on) = 28 mW

* Ultra Low Gate Charge (typ. QG(tot) = 222 nC)

* Low Effective Output Capacitance (typ. Coss = 200 pF)

* 100% Avalanche Tested

* RoHS Compliant Typical Applications

* UPS

* DC

* DC Converter

* Boost Conver

NTBG028N170M1

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Sic mosfet.

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NTBG028N170M1 SiC MOSFET ON Semiconductor

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