NTBG045N065SC1 Datasheet - ON Semiconductor

SiC MOSFET

* Typ. RDS(on) = 31 mW @ VGS = 18 V Typ. RDS(on) = 45 mW @ VGS = 15 V

* Ultra Low Gate Charge (QG(tot) = 105 nC)

* Low Effective Output Capacitance (Coss = 168 pF)

* 100% Avalanche Tested

* TJ = 175°C

* This Device is Halide Free and RoHS Compliant wit

NTBG045N065SC1

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Sic mosfet.

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NTBG045N065SC1 SiC MOSFET ON Semiconductor

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