NTBG080N120SC1 Datasheet - ON Semiconductor

SiC MOSFET

* Typ. RDS(on) = 80 mW

* Ultra Low Gate Charge (Typ. QG(tot) = 56 nC)

* Low Effective Output Capacitance (Typ. Coss = 79 pF)

* 100% Avalanche Tested

* TJ = 175°C

* This Device is Halide Free and RoHS Compliant with exemption 7a, Pb

* Free 2LI (on

NTBG080N120SC1

316.67 KB

Sic mosfet.

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NTBG080N120SC1 SiC MOSFET ON Semiconductor

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