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NTD5867NL
MOSFET – Power, N-Channel
60 V, 20 A, 39 mW
Features
• Low RDS(on) • High Current Capability • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage − Continuous
VGS
±20
V
Gate−to−Source Voltage − Non−Repetitive (tp < 10 ms)
VGS
±30
V
Continuous Drain Current (RqJC)
Power Dissipation (RqJC)
TC = 25°C
ID
Steady TC = 100°C
State TC = 25°C
PD
20
A
13
36
W
Pulsed Drain Current
tp = 10 ms
IDM
76
A
Operating Junction and Storage Temperature TJ, Tstg −55 to °C 150
Source Current (Body Diode)
IS
20
A
Single Pulse Drain−to−Source Avalanche
EAS
Energy (VDD = 50 V, VGS = 10 V
NTD5867NL Datasheet
