Datasheet4U Logo Datasheet4U.com

NTGD1100L - Power MOSFET

Description

Pullup Resistor Optional Slew Rate Control Output Capacitance Optional In Rush Current Control Values Typical 10 kW to 1.0 MW Typical 0 to 100 kW Usually < 1.0 mF Typical ≤ 1000 pF www.onsemi.com 2 VDROP, (V) RDS(on), DRAIN TO SOURCE RESISTANCE (W) RDS(on), DRAIN

Features

  • Extremely Low RDS(on) Load Switch MOSFET.
  • Level Shift MOSFET is ESD Protected.
  • Low Profile, Small Footprint Package.
  • VIN Range 1.8 to 8.0 V.
  • ON/OFF Range 1.5 to 8.0 V.
  • ESD Rating of 2000 V.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NTG High Accuracy NTC Thermistors MCC
NTG222-3950 High Accuracy NTC Thermistors MCC

Other Datasheets by onsemi

Part Number Description
NTGD3133P Power MOSFET
NTGD3147F Power MOSFET and Schottky Diode
NTGD3148N Power MOSFET
NTGD3149C Power MOSFET
NTGD4161P Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFET - Power, P-Channel, Load Switch with Level-Shift, TSOP-6 8 V, +3.3 A NTGD1100L The NTGD1100L integrates a P and N−Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high load currents are needed. The P−Channel device is specifically designed as a load switch using ON Semiconductor state−of−the−art trench technology. The N−Channel, with an external resistor (R1), functions as a level−shift to drive the P−Channel. The N−Channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The NTGD1100L operates on supply lines from 1.8 to 8.0 V and can drive loads up to 3.3 A with 8.
Published: |