Datasheet Summary
Silicon Carbide (SiC) MOSFET
- EliteSiC, 14 mohm, 1200 V, M3P, TO-247-4L
Features
- Typ. RDS(on) = 14 mW @ VGS = 18 V
- Low Switching Losses (Typ. EON 1308 mJ at 74 A, 800 V)
- 100% Avalanche Tested
- These Devices are RoHS pliant
Typical Applications
- Solar Inverters
- Electric Vehicle Charging Stations
- UPS (Uninterruptible Power Supplies)
- Energy Storage Systems
- SMPS (Switch Mode Power Supplies)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
- 10/+22 V
Remended Operation Values TC < 175°C VGSop
- 3/+18 V of Gate- to- Source Voltage
Continuous Drain Current...