Datasheet Summary
Silicon Carbide (SiC) MOSFET
- EliteSiC, 28 mohm, 1700 V, M1, TO-247-4L
Features
- Typ. RDS(on) = 28 mW @ VGS = 20 V
- Ultra Low Gate Charge (QG(tot) = 200 nC)
- High Speed Switching with Low Capacitance (Coss = 200 pF)
- 100% Avalanche Tested
- These Devices are Pb- Free and are RoHS pliant
Typical Applications
- UPS
- DC- DC Converter
- Boost Converter
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
- 15/+25 V
Remended Operation Values TC < 175°C VGSop
- 5/+20 V of Gate- to- Source Voltage
Continuous Drain Current (Note 1)
Steady TC = 25°C
State
Power...