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NTH4L028N170M1 Datasheet, ON Semiconductor

NTH4L028N170M1 mosfet equivalent, sic mosfet.

NTH4L028N170M1 Avg. rating / M : 1.0 rating-15

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NTH4L028N170M1 Datasheet

Features and benefits


* Typ. RDS(on) = 28 mW @ VGS = 20 V
* Ultra Low Gate Charge (QG(tot) = 200 nC)
* High Speed Switching with Low Capacitance (Coss = 200 pF)
* 100% Avalanch.

Application


* UPS
* DC−DC Converter
* Boost Converter MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Sy.

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