NTH4L080N120SC1 Datasheet - ON Semiconductor

SiC MOSFET

NTH4L080N120SC1 Features

* 1200 V @ TJ = 175°C

* Max RDS(on) = 110 mW at VGS = 20 V, ID = 20 A

* High Speed Switching with Low Capacitance

* 100% Avalanche Tested

* This Device is Halide Free and RoHS Compliant with exemption 7a, Pb

* Free 2LI (on second level interconnection) A

NTH4L080N120SC1 General Description

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficie.

NTH4L080N120SC1 Datasheet (404.34 KB)