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NUS5530MN - Integrated Power MOSFET

Features

  • Low RDS(on) (MOSFET) and Low VCE(sat) (Transistor).
  • Higher Efficiency Extending Battery Life.
  • Logic Level Gate Drive (MOSFET).
  • Performance DFN Package.
  • This is a Pb.
  • Free Device.

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Datasheet Details

Part number NUS5530MN
Manufacturer onsemi
File Size 223.93 KB
Description Integrated Power MOSFET
Datasheet download datasheet NUS5530MN Datasheet

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Full PDF Text Transcription

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NUS5530MN Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor This integrated device represents a new level of safety and board−space reduction by combining the 20 V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated product provides higher efficiency and accuracy for battery powered portable electronics. Features • Low RDS(on) (MOSFET) and Low VCE(sat) (Transistor) • Higher Efficiency Extending Battery Life • Logic Level Gate Drive (MOSFET) • Performance DFN Package • This is a Pb−Free Device Applications • Power Management in Portable and Battery−Powered Products; i.e.
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