NVBG040N120SC1
NVBG040N120SC1 is N-Channel MOSFET manufactured by onsemi.
Features
- Typ. RDS(on) = 40 m W
- Ultra Low Gate Charge (Typ. QG(tot) = 106 n C)
- Low Effective Output Capacitance (Typ. Coss = 139 p F)
- 100% Avalanche Tested
- AEC- Q101 Qualified and PPAP Capable
- This Device is Halide Free and Ro HS pliant with exemption 7a,
Pb- Free 2LI (on second level interconnection)
Typical Applications
- Automotive On Board Charger
- Automotive DC-DC Converter for EV/HEV
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
VGS +25/- 15 V
Remended Operation Values TC < 175°C VGSop +20/- 5 V of Gate- Source Voltage
Continuous Drain Current (Note 1)
Steady TC = 25°C
State
Power Dissipation (Note 1)
357 W
Continuous Drain Current (Note 1)
Steady TC = 100°C
State
Power Dissipation (Note 1)
178 W
Pulsed Drain Current (Note 2)
TA = 25°C
Single Pulse Surge Drain Current Capability
TA = 25°C, tp = 10 ms, RG = 4.7...
