* Typ. RDS(on) = 40 mW
* Ultra Low Gate Charge (Typ. QG(tot) = 106 nC)
* Low Effective Output Capacitance (Typ. Coss = 139 pF)
* 100% Avalanche Tested
* AEC
* Q101 Qualified and PPAP Capable
* This Device is Halide Free and RoHS Compliant with ex
NVBG040N120SC1 Datasheet (328.27 KB)
NVBG040N120SC1
328.27 KB
N-channel mosfet.
DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET 40 mohm, 1200 V, M1, D2PAK-7L NVBG040N120SC1 V(BR)DSS 1200 V RDS(ON) MAX 56 mW @ 2.
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