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PAN3080L - 30V N-channel enhancement mode MOSFET

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PAN3080L 30V N-channel enhancement mode MOSFET by PSD - Datasheet Preview — Datasheet preview – PAN3080L

Datasheet Details

Part number	PAN3080L
Manufacturer	PSD
File Size	792.46 KB
Description	30V N-channel enhancement mode MOSFET
Datasheet	PAN3080L Datasheet
Additional preview pages of the PAN3080L datasheet.

Product details

Description

The PAN3080L is a 30V N-channel enhancement mode MOSFET which uses advanced trench technology to provide excellent RDS(on), low gate charge.

This device is suitable for use in UPS, power switching and general purpose applications.

PAN3080L is packaged in TO-252-2L package.

Features

VDS(max) =30V.
ID (max)=80A.
Extremely Low RDS(on): Typ. RDS(on) = 4.0 mΩ @VGS=10 V, ID=40 A.
Good stability and uniformity.
100% avalanche tested.
Excellent package for good heat dissipation.

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