PAN3080L Datasheet, MOSFET, PSD

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PAN3080L Features and benefits

* VDS(max) =30V
* ID (max)=80A
* Extremely Low RDS(on): Typ.RDS(on) = 4.0 mΩ @VGS=10 V, ID=40 A
* Good stability and uniformity
* 100% avalanche teste.

PAN3080L Application

PAN3080L is packaged in TO-252-2L package. Features
* VDS(max) =30V
* ID (max)=80A
* Extremely Low RDS(on).

PAN3080L Description

The PAN3080L is a 30V N-channel enhancement mode MOSFET which uses advanced trench technology to provide excellent RDS(on), low gate charge. This device is suitable for use in UPS, power switching and general purpose applications. PAN3080L is package.

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