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PAN3080L Datasheet 30v N-channel Enhancement Mode MOSFET

Manufacturer: PSD

Overview: PAN3080L 30V N-channel enhancement mode MOSFET General.

Datasheet Details

Part number PAN3080L
Manufacturer PSD
File Size 792.46 KB
Description 30V N-channel enhancement mode MOSFET
Datasheet PAN3080L-PSD.pdf

General Description

The PAN3080L is a 30V N-channel enhancement mode MOSFET which uses advanced trench technology to provide excellent RDS(on), low gate charge.

This device is suitable for use in UPS, power switching and general purpose applications.

PAN3080L is packaged in TO-252-2L package.

Key Features

  • VDS(max) =30V.
  • ID (max)=80A.
  • Extremely Low RDS(on): Typ. RDS(on) = 4.0 mΩ @VGS=10 V, ID=40 A.
  • Good stability and uniformity.
  • 100% avalanche tested.
  • Excellent package for good heat dissipation.

More Datasheets from PSD

Part Number Description
PAN3060C 30V N-channel enhancement mode MOSFET

PAN3080L Distributor