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2SK3426 - Silicon Junction FETs

Features

  • High mutual conductance gm.
  • Low noise voltage of NV I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Drain-source voltage Drain-gate voltage Drain-source current Drain-gate current Gate-source current Allowable power dissipation Operating ambient temperature Storage temperature VDSO VDGO IDSO IDGO IGSO PD Topr Tstg 20 20 2 2 2 100.
  • 20 to +80.
  • 55 to +125 Unit V V mA mA mA mW °C °C 0.33+.
  • 00..0025 3 0.23+.
  • 00..0025 12 (0.40) (0.

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Datasheet Details

Part number 2SK3426
Manufacturer Panasonic
File Size 54.72 KB
Description Silicon Junction FETs
Datasheet download datasheet 2SK3426 Datasheet
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Full PDF Text Transcription

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Silicon Junction FETs (Small Signal) 2SK3426 Silicon N-Channel Junction For impedance conversion in low frequency For electret capacitor microphone I Features • High mutual conductance gm • Low noise voltage of NV I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Drain-source voltage Drain-gate voltage Drain-source current Drain-gate current Gate-source current Allowable power dissipation Operating ambient temperature Storage temperature VDSO VDGO IDSO IDGO IGSO PD Topr Tstg 20 20 2 2 2 100 −20 to +80 −55 to +125 Unit V V mA mA mA mW °C °C 0.33+–00..0025 3 0.23+–00..0025 12 (0.40) (0.40) 0.80±0.05 1.20±0.05 5˚ 0.15 min. 0.80±0.05 1.20±0.05 5˚ Unit: mm 0.10+–00..0025 0.15 min. 0 to 0.01 0.52±0.03 0.15 max.
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