2SK3427 Datasheet PDF (Silicon Junction FETs)

2SK3427 - Silicon Junction FETs

Features

High mutual conductance gm.
Low noise voltage of NV 0.40 +0.10.
0.05 3 12 1.5±0.2 5.8±0.2 2.1±0.1 5˚ Unit: mm 0.12 +0.02.
0.01 2.20±0.15 I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Drain-source voltage Drain-gate voltage Drain-source current Drain-gate current Gate-source current Allowable power dissipation Operating ambient temperature Storage temperature VDSO VDGO IDSO IDGO IGSO PD Topr Tstg 20 20 2 2 2 200.
20 to +80.

Datasheet Details

Part number	2SK3427
Manufacturer	Panasonic
File Size	56.65 KB
Description	Silicon Junction FETs
Datasheet	2SK3427 Datasheet
Additional preview pages of the 2SK3427 datasheet.

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Full PDF Text Transcription

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Silicon Junction FETs (Small Signal) 2SK3427 Silicon N-Channel Junction For impedance conversion in low frequency For electret capacitor microphone I Features • High mutual conductance gm • Low noise voltage of NV 0.40 +0.10 –0.05 3 12 1.5±0.2 5.8±0.2 2.1±0.1 5˚ Unit: mm 0.12 +0.02 –0.01 2.20±0.15 I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Drain-source voltage Drain-gate voltage Drain-source current Drain-gate current Gate-source current Allowable power dissipation Operating ambient temperature Storage temperature VDSO VDGO IDSO IDGO IGSO PD Topr Tstg 20 20 2 2 2 200 −20 to +80 −55 to +150 Unit V V mA mA mA mW °C °C (0.95) (0.95) 1.9±0.1 2.9±0.2 10˚ (0.5) 0.7±0.

Published: Apr 3, 2016 |