2SA1323 - Silicon NPN epitaxial planer type Transistor
Panasonic
Key Features
q q q
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings.
30.
20.
5.
60.
30 300 150.
55 ~ +150
Unit V V V mA mA mW ˚C ˚C
1:Emitter 2:Collector 3:Base
1
2
3
1.27 1.27 2.54±0.15
EIAJ:SC.
72 New S Type Package
s Electrical Characteristics
Par.
Full PDF Text Transcription for 2SA1323 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
2SA1323. For precise diagrams, and layout, please refer to the original PDF.
Transistor 2SA1323 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC3314 Unit: mm 4.0±0.2 3.0±0.2 0.7±0.1 s Features q q q Parameter...
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to 2SC3314 Unit: mm 4.0±0.2 3.0±0.2 0.7±0.1 s Features q q q Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –30 –20 –5 –60 –30 300 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 1:Emitter 2:Collector 3:Base 1 2 3 1.27 1.27 2.54±0.
2SA1323 Datasheet
