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Panasonic Electronic Components Datasheet

2SB873 Datasheet

Silicon PNP epitaxial planer type(For low-frequency power amplification)

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2SB873 pdf
Transistor
2SB873
Silicon PNP epitaxial planer type
For low-frequency power amplification
For DC-DC converter
For stroboscope
s Features
q Low collector to emitter saturation voltage VCE(sat).
q Large collector current IC.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
–30
–20
–7
–10
–5
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
5.9±0.2
Unit: mm
4.9±0.2
0.7±0.1
2.54±0.15
+0.2
0.45–0.1
1.27
1.27
123
+0.2
0.45–0.1
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
IEBO
VCEO
VEBO
hFE*1
VCE(sat)
fT
Cob
Conditions
VCB = –10V, IE = 0
VEB = –5V, IC = 0
IC = –1mA, IB = 0
IE = –10µA, IC = 0
VCE = –2V, IC = –2A*2
IC = –3A, IB = –0.1A*2
VCB = –6V, IE = 50mA, f = 200MHz
VCB = –20V, IE = 0, f = 1MHz
min
–20
–7
90
typ max Unit
–100 nA
–100 nA
V
V
625
–1 V
120 MHz
85 pF
*2 Pulse measurement
*1hFE Rank classification
Rank
P
Q
hFE 90 ~ 135 120 ~ 205
R
180 ~ 625
1


Panasonic Electronic Components Datasheet

2SB873 Datasheet

Silicon PNP epitaxial planer type(For low-frequency power amplification)

No Preview Available !

2SB873 pdf
Transistor
PC — Ta
1.2
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
–100
–30
–10
VCE(sat) — IC
IC/IB=30
–3
–1
– 0.3
– 0.1
Ta=75˚C
25˚C
–25˚C
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
Cob — VCB
200
IE=0
180 f=1MHz
Ta=25˚C
160
140
120
100
80
60
40
20
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V)
IC — VCE
–6
Ta=25˚C
IB=–40mA –35mA
–5 –30mA
–25mA
–4
–20mA
–15mA
–3
–10mA
–2
–5mA
–1
–1mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
hFE — IC
600
Ta=75˚C
500
VCE=–2V
25˚C
400
–25˚C
300
200
100
0
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
Area of safe operation (ASO)
–100
–30
–10 ICP
Single pulse
Ta=25˚C
–3 IC
–1
t=10ms
t=1s
– 0.3
– 0.1
– 0.03
– 0.01
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector to emitter voltage VCE (V)
2SB873
IC — VBE
–12
VCE=–2V
25˚C
–10
Ta=75˚C –25˚C
–8
–6
–4
–2
0
0 – 0.4 – 0.8 –1.2 –1.6 –2.0
Base to emitter voltage VBE (V)
fT — IE
240
VCB=–6V
Ta=25˚C
200
160
120
80
40
0
1
3
10 30
100
Emitter current IE (mA)
2


Part Number 2SB873
Description Silicon PNP epitaxial planer type(For low-frequency power amplification)
Maker Panasonic Semiconductor
Total Page 2 Pages
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