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Power Transistors
2SC5583
Silicon NPN triple diffusion mesa type
Unit: mm
For horizontal deflection output
(10.0) (6.0) (2.0) (4.0)
20.0±0.5 φ 3.3±0.2
5.0±0.3 (3.0)
I Features
• High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide area of safe operation (ASO)
26.0±0.5
(3.0)
(1.5)
(1.5) 2.0±0.3 3.0±0.3 1.0±0.2 0.6±0.2 5.45±0.3 10.9±0.5 (1.5) 2.7±0.3
I Absolute Maximum Ratings TC = 25°C
Parameter Collector to base voltage Collector to emitter voltage Symbol VCBO VCES VCEO Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25°C Ta = 25°C Tj Tstg VEBO ICP IC IB PC Rating 1 500 1 500 600 7 30 17 8 150 3 150 −55 to +150 °C °C Unit V V V V A A A W
20.0±0.5 (2.
2SC5583 Datasheet
