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Panasonic Electronic Components Datasheet

2SD1539 Datasheet

Silicon NPN Transistor

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Power Transistors
2SD1539, 2SD1539A
Silicon NPN epitaxial planar type
For low-voltage switching
Complementary to 2SB1071 and 2SB1071A
s Features
q Low collector to emitter saturation voltage VCE(sat)
q High-speed switching
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SD1539
base voltage 2SD1539A
VCBO
40
50
Collector to 2SD1539
emitter voltage 2SD1539A
VCEO
20
40
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
PC
5
8
4
25
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SD1539
current
2SD1539A
Emitter cutoff current
Collector to emitter 2SD1539
voltage
2SD1539A
ICBO
IEBO
VCEO
VCB = 40V, IE = 0
VCB = 50V, IE = 0
VEB = 5V, IC = 0
IC = 10mA, IB = 0
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
hFE1
hFE2*
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCE = 2V, IC = 0.1A
VCE = 2V, IC = 1A
IC = 2A, IB = 0.1A
IC = 2A, IB = 0.1A
VCE = 5V, IC = 0.5A, f = 10MHz
IC = 2A, IB1 = 0.2A, IB2 = – 0.2A,
VCC = 20V
*hFE2 Rank classification
Rank
Q
P
hFE2 90 to 180 130 to 260
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
min typ max Unit
50
µA
50
50 µA
20
V
40
45
90 260
0.5 V
1.5 V
120 MHz
0.2 µs
0.5 µs
0.1 µs
1


Panasonic Electronic Components Datasheet

2SD1539 Datasheet

Silicon NPN Transistor

No Preview Available !

Power Transistors
40
35
30
(1)
25
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2W)
20
15
(2)
10
(3)
5
(4)
0
0 25 50 75 100 125 150
Ambient temperature Ta (˚C)
VBE(sat) — IC
100
IC/IB=10
30
10
3
1 TC=–25˚C
25˚C
0.3 100˚C
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
ton, tstg, tf — IC
10
3
1 tstg
Pulsed tw=1ms
Duty cycle=1%
IC/IB=10 (IB1=–IB2)
VCC=20V
TC=25˚C
0.3 ton
tf
0.1
0.03
0.01
0
1234567
Collector current IC (A)
8
IC — VCE
6
TC=25˚C
5 IB=60mA
50mA
4 40mA
30mA
3
20mA
2
10mA
1
5mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2SD1539, 2SD1539A
VCE(sat) — IC
100
IC/IB=10
30
10
3
1
TC=100˚C
0.3 25˚C
0.1 –25˚C
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
10000
3000
1000
300
100
30
10
hFE — IC
TC=100˚C
25˚C
–25˚C
VCE=2V
3
1
0.1 0.3 1 3 10 30 100
Collector current IC (A)
10000
3000
1000
fT — IC
VCE=5V
f=10MHz
TC=25˚C
300
100
30
10
3
1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
Area of safe operation (ASO)
100
Non repetitive pulse
TC=25˚C
30
10 ICP
IC
3
10ms
t=1ms
1 DC
0.3
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
2


Part Number 2SD1539
Description Silicon NPN Transistor
Maker Panasonic Semiconductor
Total Page 3 Pages
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