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2SD1539 - Silicon NPN Transistor

Features

  • q q q Low collector to emitter saturation voltage VCE(sat) High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) 14.0±0.5 Parameter Collector to base voltage Collector to 2SD1539 2SD1539A 2SD1539 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 40 50 20 40 5 8 4 25 2 150.
  • 55 to +150 Unit V emitter voltage 2SD1539A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction te.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistors 2SD1539, 2SD1539A Silicon NPN epitaxial planar type For low-voltage switching Complementary to 2SB1071 and 2SB1071A Unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2 s Features q q q Low collector to emitter saturation voltage VCE(sat) High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) 14.0±0.
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