* High forward current transfer ratio hFE
* Allowing supply with the radial taping
* Low collector to emitter saturation voltage VCE(sat): < 2.5 V 2.5±0.1 1.2±0.1 1.48±0.2 90° C 1.0 2.25±0.2 18.0±0.5 Solder Dip 0.65±0.1 0.65±0.1 0.35±0.1 1.05±0.1 0.55±0.1 0.55±0.1 I Ab
2SD2530
Panasonic Semiconductor
45.78 KB
Silicon npn triple diffusion planer type transistor.
Power Transistors 2SD2530 Silicon NPN triple diffusion planer type Darlington Unit: mm 4.2±0.2 For power amplification 13.0±0.2 10.0±0.2 1.0±0.2 5.
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