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Panasonic Electronic Components Datasheet

2SD637 Datasheet

Silicon NPN epitaxial planer type

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Transistor
2SD637
Silicon NPN epitaxial planer type
For low-power general amplification
s Features
q High foward current transfer ratio hFE.
q Low collector to emitter saturation voltage VCE(sat).
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
60
50
7
200
100
400
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
0.55±0.1
321
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
ICBO
ICEO
VCBO
VCB = 20V, IE = 0
VCE = 20V, IB = 0
IC = 10µA, IE = 0
1 µA
1 µA
60 V
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
VCEO
VEBO
hFE*
IC = 2mA, IB = 0
IE = 10µA, IC = 0
VCE = 10V, IC = 2mA
50 V
7V
160 460
Collector to emitter saturation voltage VCE(sat)
IC = 100mA, IB = 10mA
0.3 0.5
V
Transition frequency
fT VCB = 10V, IE = –2mA, f = 200MHz 150 MHz
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
3.5 pF
*hFE Rank classification
Rank
Q
hFE 160 ~ 260
R
210 ~ 340
S
290 ~ 460
1


Panasonic Electronic Components Datasheet

2SD637 Datasheet

Silicon NPN epitaxial planer type

No Preview Available !

Transistor
PC — Ta
500
400
300
200
100
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC — VBE
200
VCE=10V
160
120
25˚C
Ta=75˚C –25˚C
80
40
0
0 0.4 0.8 1.2 1.6 2.0
Base to emitter voltage VBE (V)
hFE — IC
600
VCE=10V
500
400 Ta=75˚C
25˚C
300
–25˚C
200
100
0
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
IC — VCE
60
Ta=25˚C
IB=160µA
50
140µA
40 120µA
100µA
30
80µA
20 60µA
40µA
10
20µA
0
0 2 4 6 8 10
Collector to emitter voltage VCE (V)
2SD637
IB — VBE
1200
1000
VCE=10V
Ta=25˚C
800
600
400
200
0
0 0.2 0.4 0.6 0.8 1.0
Base to emitter voltage VBE (V)
IC — IB
240
VCE=10V
Ta=25˚C
200
160
120
80
40
0
0 200 400 600 800 1000
Base current IB (µA)
fT — IE
300
VCB=10V
Ta=25˚C
240
180
120
60
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Emitter current IE (mA)
VCE(sat) — IC
100
IC/IB=10
30
10
3
1
0.3
0.1
25˚C
Ta=75˚C
0.03 –25˚C
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
Cob — VCB
12
IE=0
f=1MHz
Ta=25˚C
10
8
6
4
2
0
1
3
10 30
100
Collector to base voltage VCB (V)
2


Part Number 2SD637
Description Silicon NPN epitaxial planer type
Maker Panasonic Semiconductor
Total Page 3 Pages
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