2SD635 NPN Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD635 .
High DC Current Gain : hFE= 2000(Min. Low Saturation Voltage : VCE(sat)= 1. Complement to Type 2SB675.

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Datasheet Specifications

Part number: 2SD635
Manufacturer: INCHANGE
File Size: 202.65 KB
Datasheet: 2SD635-INCHANGE.pdf
Description: NPN Transistor

Applications

* High power switching applications.
* Hammer drive, pulse motor drive applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuou

2SD635 Distributors

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2SD635 NPN Transistor INCHANGE

INCHANGE 2SD635-like datasheet