2SD635

NPN Transistor

INCHANGE

2SD635 General Description

*High DC Current Gain : hFE= 2000(Min.) @IC= 3.0A
*Low Saturation Voltage : VCE(sat)= 1.5V(Max.)@ IC= 3.0A
*Complement to Type 2SB675
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*High power switching applications.
*Hammer .

2SD635 Datasheet (202.65 KB)

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2SD635

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INCHANGE

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202.65 KB

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Npn transistor.

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2SD635 NPN Transistor INCHANGE

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