Datasheet4U Logo Datasheet4U.com

2SD635 NPN Transistor

2SD635 Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD635 .
High DC Current Gain : hFE= 2000(Min. Low Saturation Voltage : VCE(sat)= 1. Complement to Type 2SB675.

2SD635 Applications

* High power switching applications.
* Hammer drive, pulse motor drive applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuou

📥 Download Datasheet

Preview of 2SD635 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
2SD635
Manufacturer
INCHANGE
File Size
202.65 KB
Datasheet
2SD635-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • 2SD633 - NPN TRIPLE DIFFUSED TRANSISTOR (Toshiba Semiconductor)
  • 2SD633P - PNP / NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SD634 - NPN Transistor (Toshiba)
  • 2SD636 - (2SD636 / 2SD637) NPN Transistor (Panasonic)
  • 2SD637 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD638 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD639 - Silicon PNP Transistor (Panasonic Semiconductor)
  • 2SD600 - PNP/NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE 2SD635-like datasheet