* 1 Composite Transistors PT
* Ta 500 XN1210 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC
* VCE 60 VCE(sat)
* IC 100 hFE
* IC IC/IB=10 400 VCE=10V Collector to emitter saturation voltage VCE(sat) (V) 50
XN1210
Panasonic Semiconductor
33.32 KB
Silicon npn epitaxial planer transistor.
Composite Transistors XN1210 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.0.
📁 Related Datasheet
XN1211 Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
XN1212 Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
XN1213 Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
XN1214 Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
XN1215 Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
XN1216 Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
XN1217 Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
XN121E Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
XN121F Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
XN121M NPN epitaxial planer transistor (Panasonic Semiconductor)
