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XN121E Datasheet

Silicon NPN epitaxial planer transistor

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Composite Transistors
XN121E
Silicon NPN epitaxial planer transistor
For switching/digital circuits
s Features
q Two elements incorporated into one package.
(Emitter-coupled transistors with built-in resistor)
q Reduction of the mounting area and assembly cost by one half.
0.65±0.15
5
4
3
2.8
+0.2
-0.3
1.5
+0.25
-0.05
Unit: mm
0.65±0.15
1
2
s Basic Part Number of Element
q UN121E × 2 elements
0.1 to 0.3
0.4±0.2
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Rating Collector to base voltage
of Collector to emitter voltage
element Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
VCBO
VCEO
IC
PT
Tj
Tstg
Ratings
50
50
100
300
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
1 : Collector (Tr1)
2 : Collector (Tr2)
3 : Base (Tr2)
4 : Emitter
5 : Base (Tr1)
EIAJ : SC–74A
Mini Type Pakage (5–pin)
Marking Symbol: AQ
Internal Connection
Tr1
5
1
4
3
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Forward current transfer hFE ratio
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Input resistance
Resistance ratio
Transition frequency
*1 Ratio between 2 elements
Symbol
VCBO
VCEO
ICBO
ICEO
IEBO
hFE
hFE (small/large)*1
VCE(sat)
VOH
VOL
R1
R1/R2
fT
Conditions
IC = 10µA, IE = 0
IC = 2mA, IB = 0
VCB = 50V, IE = 0
VCE = 50V, IB = 0
VEB = 6V, IC = 0
VCE = 10V, IC = 5mA
VCE = 10V, IC = 5mA
IC = 10mA, IB = 0.3mA
VCC = 5V, VB = 0.5V, RL = 1k
VCC = 5V, VB = 6V, RL = 1k
VCB = 10V, IE = –2mA, f = 200MHz
min
50
50
60
0.5
4.9
–30%
2
Tr2
typ max Unit
V
V
0.1 µA
0.5 µA
0.2 mA
0.99
0.25 V
V
0.2 V
47 +30% k
2.14
150 MHz
1


Panasonic Electronic Components Datasheet

XN121E Datasheet

Silicon NPN epitaxial planer transistor

No Preview Available !

Composite Transistors
PT — Ta
500
400
300
200
100
0
0 40 80 120 160
Ambient temperature Ta (˚C)
XN121E
IC — VCE
60
IB=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
Ta=25˚C
50
40
0.3mA 0.2mA
30
0.4mA
0.5mA
0.1mA
20
10
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
VCE(sat) — IC
100
IC/IB=10
30
10
3
1
Ta=75˚C
0.3
25˚C
0.1
0.03
– 25˚C
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
hFE — IC
160
VCE=10V
Ta=75˚C
120
25˚C
– 25˚C
80
40
0
1 3 10 30 100 300 1000
Collector current IC (mA)
Cob — VCB
6
f=1MHz
IE=0
Ta=25˚C
5
4
3
2
1
0
0.1 0.3 1 3 10 30 100
Collector to base voltage VCB (V)
10000
3000
1000
IO — VIN
VO=5V
Ta=25˚C
300
100
30
10
3
1
1.5 2.0 2.5 3.0 3.5 4.0
Input voltage VIN (V)
VIN — IO
100 VO=0.2V
Ta=25˚C
30
10
3
1
0.3
0.1
0.03
0.01
0.1
0.3 1 3 10 30
Output current IO (mA)
100
2


Part Number XN121E
Description Silicon NPN epitaxial planer transistor
Maker Panasonic Semiconductor
Total Page 2 Pages
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