* 1 Composite Transistors PT
* Ta 500 XN1216 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC
* VCE 160 VCE(sat)
* IC 100 hFE
* IC IC/IB=10 400 VCE=10V Ta=25˚C 140 IB=1.0mA Collector to emitter saturation vo
XN1216
Panasonic Semiconductor
32.92 KB
Silicon npn epitaxial planer transistor.
Composite Transistors XN1216 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.0.
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