XN1872 fet equivalent, silicon n-channel . enhancement mos fet.
1
Composite Transistors
PT — Ta
500
120 Ta=25˚C
XN1872
ID — VDS
120 VDS=5V 100 VGS=6.0V 80 5.5V 5.0V 4.5V 40
ID — VGS
Total power dissipation PT (mW)
400
100
Drai.
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