* 1 Composite Transistors PT
* Ta 500 120 Ta=25˚C XN1872 ID
* VDS 120 VDS=5V 100 VGS=6.0V 80 5.5V 5.0V 4.5V 40 ID
* VGS Total power dissipation PT (mW) 400 100 Drain current ID (mA) Drain current ID (mA) 80 Ta=
* 25˚C 25˚C 300 60 60 75˚C 200 4.0V 3.5V 3.0
XN1872
Panasonic Semiconductor
32.08 KB
Silicon n-channel . enhancement mos fet.
Composite Transistors XN1872 Silicon N-channel Enhancement MOS FET Unit: mm For switching 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65.
📁 Related Datasheet
XN1871 Silicon N-channel junction FET (Panasonic Semiconductor)
XN1042 Current Mode PWM Controller (ETC)
XN1042 Switching power supply controller IC (Innuovo)
XN1043 Switching power supply controller IC (Innuovo)
XN1049 Switch Power Supply PWM Controller (Innuovo)
XN1059 Switching power supply controller IC (Innuovo)
XN1110 Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
XN1111 Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
XN1112 Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
XN1113 Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
