* 1 Composite Transistors PT
* Ta 500 60 Ta=25˚C IB=160µA XN2501 IC
* VCE 1200 VCE=10V Ta=25˚C 1000 IB
* VBE Total power dissipation PT (mW) Collector current IC (mA) 400 50 40 120µA 100µA Base current IB (µA) 140µA 800 300 30 80µA 20 60µA 40µA 10 20µA 600 200
XN2501
Panasonic Semiconductor
33.45 KB
Silicon npn epitaxial planer transistor.
Composite Transistors XN2501 Silicon NPN epitaxial planer transistor Unit: mm For general amplification 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 .
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