* 1 Composite Transistors PT
* Ta 240 80 Ta=25˚C XN2531 IC
* VCE 60 25˚C 50 VCE=4V IC
* VBE Total power dissipation PT (mW) 200 Collector current IC (mA) 60 160 Collector current IC (mA) Ta=75˚C 40
* 25˚C IB=500µA 40 400µA 300µA 200µA 20 100µA 120 30 80
XN2531
Panasonic Semiconductor
32.54 KB
Silicon npn epitaxial planer transistor.
Composite Transistors XN2531 Silicon NPN epitaxial planer transistor Unit: mm For high frequency, oscillation and mixing 2.8 -0.3 0.65±0.15 +0.2 +0..
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